METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided which can prevent a polycrystalline silicon residue from being remained on a peripheral circuit region. CONSTITUTION: According to a method for fabricating a semiconductor device, an insulation layer(6) pattern is located on top of a peripheral circuit region before a polycrystalline silicon for forming a plug is deposited. Then, a plug(5) is formed by depositing and planarizing the polycrystalline silicon, and the insulation layer pattern is removed. Therefore, it is prevented for the polycrystalline silicon to be remained on a side of a gate formed on the peripheral circuit region after the etching of the polycrystalline silicon. Thus, the reliability and the characteristics of the semiconductor device is improved.