发明名称 |
STRUCTURE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part is formed in a plane body and a polyhedron is constituted by combining both. To attain the above constitution, a wafer of single crystal material is formed with a stepped surface having a value corresponding to at least the depth of the curvature in a first anisotropic etching process using a prescribed etching mask, and in a second anisotropic etching process, an etching mask is used by removing at least a part of the etching mask used in the first anisotropic etching process. |
申请公布号 |
KR100264292(B1) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19910016781 |
申请日期 |
1991.09.26 |
申请人 |
HITACHI AUTOMOTIVE ENGINEERING CO., LTD.;HITACHI, LTD. |
发明人 |
GOIDE, AKIRA;SATO, KAZUO;SUZUKI, SEIKO;ICHIGAWA, NORIO;AUBAYASHI, HIDEHITO;HAYASHI, MASAHIDE |
分类号 |
G01P15/125;B81B3/00;H01L21/306;H01L21/308;H01L29/84 |
主分类号 |
G01P15/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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