发明名称 STRUCTURE AND METHOD OF FABRICATING THE SAME
摘要 A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part is formed in a plane body and a polyhedron is constituted by combining both. To attain the above constitution, a wafer of single crystal material is formed with a stepped surface having a value corresponding to at least the depth of the curvature in a first anisotropic etching process using a prescribed etching mask, and in a second anisotropic etching process, an etching mask is used by removing at least a part of the etching mask used in the first anisotropic etching process.
申请公布号 KR100264292(B1) 申请公布日期 2000.08.16
申请号 KR19910016781 申请日期 1991.09.26
申请人 HITACHI AUTOMOTIVE ENGINEERING CO., LTD.;HITACHI, LTD. 发明人 GOIDE, AKIRA;SATO, KAZUO;SUZUKI, SEIKO;ICHIGAWA, NORIO;AUBAYASHI, HIDEHITO;HAYASHI, MASAHIDE
分类号 G01P15/125;B81B3/00;H01L21/306;H01L21/308;H01L29/84 主分类号 G01P15/125
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