INSULATION LAYER BETWEEN METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

PURPOSE: An insulation layer between metal wiring of a semiconductor device is provided to prevent a capacity degradation by reducing capacitance of a parasitic capacitor, and to easily form a fine contact hole for connecting metal wiring by using a conventional process. CONSTITUTION: An insulation layer between a first metal wiring layer(130) and a second metal wiring layer(170) on a semiconductor substrate(100) comprises a first insulation layer(140) and a second insulation layer(150). The first insulation layer is formed in the vicinity of a contact plug to connect the first metal wiring layer and the second metal wiring layer in the insulation layer between metal wiring. The second insulation layer is composed of a low dielectric material formed in the vicinity of the first insulation layer.