DRIVING CIRCUIT OF NON-VOLATILE FERROELECTRICS MEMORY DEVICE

摘要

PURPOSE: A driving circuit of a non-volatile ferroelectric memory device is provided to simplify a construction of a word line driving unit by jointly owning a cell array in a row direction and to be suitable for integration by minimizing an area of an over layout. CONSTITUTION: An X address signal outputting unit(120) consists of a first and a second transistors serially connected with a global word line outputted from a global X decoder(63). A split word line drive signal outputting unit(121) consists of a third and a fourth transistors for sequentially applying two control signals outputted from a second local controller(69a) after being sequentially controlled by a drain voltage of each transistor to a first and a second split word lines of a second main cell array(61a). A bypass unit(123) consists of a fifth transistor connected between the first split word line and the global word line and a sixth transistor connected between the second split word line and the global word line.