发明名称 SEMICONDUCTOR MASK AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor mask and a manufacturing method thereof are provided to manufacture the semiconductor mask of precise pattern by a simple method without reducing the beam size. CONSTITUTION: According to a method for manufacturing a semiconductor mask, more than two light blocking films are formed in the semiconductor mask wherein a second first light blocking film(13) is formed on the side of a first light blocking film(11). After the first light blocking film is formed, the second light blocking film on the side of the first light blocking film with a specific width for controlling precisely to have a desired mask pattern size. According to the method, the first light blocking film is formed on top of a transparent glass substrate(G), and a photoresist film(12) is deposited on the top, and a photoresist pattern is formed by irradiating the photoresist film with a beam of a large beam size by data established by the size of the mask pattern to form. Then, a first light blocking of mask pattern size is formed by etching the first light blocking film with the photoresist pattern as a resist, and then the photoresist pattern is removed.
申请公布号 KR20000051685(A) 申请公布日期 2000.08.16
申请号 KR19990002260 申请日期 1999.01.25
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 BAE, DONG JOO;LEE, KANG WAN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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