发明名称 |
SEMICONDUCTOR MASK AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor mask and a manufacturing method thereof are provided to manufacture the semiconductor mask of precise pattern by a simple method without reducing the beam size. CONSTITUTION: According to a method for manufacturing a semiconductor mask, more than two light blocking films are formed in the semiconductor mask wherein a second first light blocking film(13) is formed on the side of a first light blocking film(11). After the first light blocking film is formed, the second light blocking film on the side of the first light blocking film with a specific width for controlling precisely to have a desired mask pattern size. According to the method, the first light blocking film is formed on top of a transparent glass substrate(G), and a photoresist film(12) is deposited on the top, and a photoresist pattern is formed by irradiating the photoresist film with a beam of a large beam size by data established by the size of the mask pattern to form. Then, a first light blocking of mask pattern size is formed by etching the first light blocking film with the photoresist pattern as a resist, and then the photoresist pattern is removed.
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申请公布号 |
KR20000051685(A) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19990002260 |
申请日期 |
1999.01.25 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
BAE, DONG JOO;LEE, KANG WAN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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主权项 |
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地址 |
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