METHOD FOR MANUFACTURING METAL WIRING LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal wiring layer of a semiconductor device is provided to make a perfect state of a metal evaporation and to prevent a failure of a chip caused by an increased resistance, by controlling an etching selection ratio of a nitride layer and a metal layer to prevent a plug recess of the metal layer. CONSTITUTION: A method for manufacturing a metal wiring layer of a semiconductor device comprises the steps of: evaporating an insulation layer on the entire structure having a lower metal wiring layer for being insulated from an upper metal wiring layer; forming a contact or a via hole on the insulation layer for connecting metal wiring layers by a photolithography process; sequentially forming a barrier metal and a metal layer on the entire structure having the contact and the via hole; evaporating a nitride layer on the metal layer; forming a photoresist layer pattern having a pattern opposite to the contact and via hole pattern on the nitride layer; etching the nitride layer by using the photoresist layer pattern as a mask and eliminating the photoresist layer used as a mask; controlling a selection ratio of the nitride layer and the metal layer by an in-situ etching according to the thickness of the nitride layer and performing a planarization process, so that an upper part of the metal layer can be in parallel with an upper part of the barrier metal; and evaporating a metal layer on the entire structure etching back the metal layer.