| 摘要 |
PURPOSE: A fabrication of the MOS transistor using a trench is provided by preventing the occurrence of a leakage current and a short through separating the trench and an active region. CONSTITUTION: A fabrication method of the MOS transistor using the trench contains the following steps: a step to form the trench at the device isolation region of a silicon wafer by a photo-lithography process, after forming a pad oxide and a nitride layer on the silicon wafer; a step to grow a liner oxide at inner-wall of the trench, and to bury the trench after vapor-depositing a oxide layer heavily; a step to have the oxide layer remain on only the trench region and/or its top after etching the oxide layer; a step to level the oxide layer, then to form a multi-electrode at the MOS transistor region; a step to remove the remained thin-layer, after forming a silicide by vapor-depositing a thin layer on the front of the silicon wafer; a step to form a dielectric layer at the front of the silicon wafer; a step to vapor-deposit a metal oxide, after etching the dielectric layer by the photo-lithography process; a step to vapor-deposit the nitride layer at the front of the silicon wafer before the step to level the oxide layer by a chemical mechanical polishing process; and a step to have the nitride layer remain at the edge portion of the trench by etching back the nitride layer.
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