METHOD FOR FORMING BIT LINE TO SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method is provided to prevent a short between a bit line and gate electrode by avoiding an over-etching of a bit line contact pad. CONSTITUTION: A method comprises steps: a) depositing a bit line contact pad(108a), a material layer(109), and an inter dielectric layer(110) in sequence on a substrate(100); b) forming a bit line opening(112a, 112b) on each of cell array and core/peripheral region by etching a part of an inter dielectric layer selectively; c) forming a bit line spacer(114a,114b) on both walls of bit line openings, in which a bit line contact pad(108a) is exposed by etching a material layer; d) forming a bit line contact hole(116) by etching an inter dielectric layer; e) depositing a conductive layer(120) on overall substrate; and f) forming a bit line(120a) connected to a bit line contact pad on a cell array region as well as a b it line(120c) connected to a substrate on a core/peripheral region by etching a conductive layer.