| 摘要 |
PURPOSE: A fabrication of a semiconductor device is provided in order to avoid that a region implanting the ions for controlling a threshold voltage and another region of a source/drain impurity are contacted each other. CONSTITUTION: A fabrication method of the semiconductor device contains the following processes: a process to form a mask so as to be exposed to a substrate of the region which a gate electrode is to be formed; a process to perform an ion implantation at the exposed substrate, after forming a sidewall of the mask; a process to form the gate electrode at the substrate, after removing the sidewall; and a process to form the impurity region of the source/drain in the substrate of the both side of the gate electrode, after removing the mask.
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