METHOD FOR MANUFACTURING TRIAC DEVICE

摘要

PURPOSE: A method for manufacturing a triac device is provided to improve an internal pressure characteristic without affecting other characteristic, by maintaining a low density surface by ion injection and diffusion on a bottom surface of a wafer having a high resistance. CONSTITUTION: A method for manufacturing a triac device comprises the steps of: preparing a wafer of a high resistance state; forming an insulation region on both sides of the wafer while injecting impurities to have the bottom of the wafer become a low density state; preparing a base region on the top and bottom of the wafer; forming a gate region and an emitter region in the base region of the top and bottom of the wafer; and forming a first electrode, a gate electrode and a second electrode. The first electrode is joined to the base region and the emitter region on the bottom respectively. The gate electrode is connected to the gate region on the top across the base region. The second electrode is connected to the base region on the bottom across the emitter region.