发明名称 |
METHOD FOR FORMING METALLIC WIRE BY TREATING PLASMA OF SEED LAYER |
摘要 |
PURPOSE: A method for forming a metallic wire by treating a plasma of a seed layer is provided to remove a overhang situation on the seed layer and prevent the void from being formed in a contact plug thereby. CONSTITUTION: A method for forming the metal wire by the plasma treatment of the seed layer contains the following steps: a step to form the seed layer with vapor-depositing a conductor by physical vapor deposition on the top of inter-layer dielectric which has a contact hole exposing a partial conduction layer on the semi-conductor substrate, and at inner surface of the contact hole; a step to form the seed layer which does not generate the overhang situation by the plasma treatment of the seed layer; and a step to form the contact plug which is buried(fills up) by vapor-depositing the conductive substance on the seed layer to be treated by plasma, and the conductive layer to be extended from the top of the inter-layer dielectric and the contact plug.
|
申请公布号 |
KR20000051178(A) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19990001468 |
申请日期 |
1999.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, GEUN TAEK |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|