发明名称 METHOD FOR FORMING METALLIC WIRE BY TREATING PLASMA OF SEED LAYER
摘要 PURPOSE: A method for forming a metallic wire by treating a plasma of a seed layer is provided to remove a overhang situation on the seed layer and prevent the void from being formed in a contact plug thereby. CONSTITUTION: A method for forming the metal wire by the plasma treatment of the seed layer contains the following steps: a step to form the seed layer with vapor-depositing a conductor by physical vapor deposition on the top of inter-layer dielectric which has a contact hole exposing a partial conduction layer on the semi-conductor substrate, and at inner surface of the contact hole; a step to form the seed layer which does not generate the overhang situation by the plasma treatment of the seed layer; and a step to form the contact plug which is buried(fills up) by vapor-depositing the conductive substance on the seed layer to be treated by plasma, and the conductive layer to be extended from the top of the inter-layer dielectric and the contact plug.
申请公布号 KR20000051178(A) 申请公布日期 2000.08.16
申请号 KR19990001468 申请日期 1999.01.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GEUN TAEK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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