APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To suppress the deposition and accumulation of an amorphous material on the inner surface of an observing window of a purification chamber at the time of purification of a semiconductor single crystal to retard the progress of the decrease of transparency of the window. SOLUTION: An inert gas-blowing port 29 is installed in the region of an observing window 18 in a purification chamber 1 for melting a part of a polycrystal material 6 by heating the material 6 by a high-frequency induction heating coil 7, and moving a floating molten zone 9 in the perpendicular direction to purify a single crystal 8. A heating coil 30 is installed in a gas- introducing tube 29b of the inert gas-blowing port 29. An inert gas introduced through the inert gas-blowing port 29 is heated by the heating coil 30 and blown out from a nozzle part 29a into the region of the observing window 18. The heated inert blown gas blows off an amorphous material floating to the observing window 18 side in the purification chamber 1 to prevent the amorphous material from attaching to and depositing on the inner surface of the window 18.