发明名称 |
CVD method for forming oxide-system dielectric thin film |
摘要 |
The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.
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申请公布号 |
US6103002(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19980112569 |
申请日期 |
1998.07.09 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
UCHIKAWA, FUSAOKI;MATSUNO, SHIGERU;KINOUCHI, SHINICHI;WATARAI, HISAO |
分类号 |
C23C16/40;C23C16/448;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):C23C16/40 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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