| 摘要 |
The rapid thermal oxidation (RTO) and rapid thermal annealing(RTA) were used to improve the photo-current and photoresponsivity of porous silicon photodetector. In addition, we remove the surface oxide of the porous silicon under the metal grid using the same mask, and enhance the photo-current of porous silicon photodetector at zero bias voltage. This invention removes the limitation of application of the porous silicon photodetector.
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