发明名称 Circuit and method for improving short-circuit capability of IGBTs
摘要 A simple, off-chip circuit and method for endowing high efficiency IGBTs with short-circuit capability, that is essentially transparent to the user. The invention involves adding an external common emitter resistor to reduce the effective gain of an IGBT under short circuit. Under normal operating conditions, the voltage across the resistor is small, such that the modifying effect on the normal operating gate-emitter voltage is almost negligible.
申请公布号 US6104149(A) 申请公布日期 2000.08.15
申请号 US19970807781 申请日期 1997.02.28
申请人 INTERNATIONAL RECTIFIER CORP. 发明人 PELLY, BRIAN R.
分类号 H02M7/537;H02H7/12;H02H9/02;H02P27/06;H03K17/08;H03K17/0814;(IPC1-7):H02K23/00 主分类号 H02M7/537
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