发明名称 High speed global row redundancy system
摘要 A row repair system for replacing a defective primary memory row with a redundant memory row within an entire section of an integrated circuit memory chip. The system comprises a dedicated match circuit for each redundant row in a given section. The match circuit analyzes incoming address information to determine whether the address corresponds to a memory location in a specific defective row in any one of a number of sub-array blocks within the section. When such a critical address is detected, the match circuit activates circuitry which inhibits access to the defective row and enables access to its dedicated redundant row.
申请公布号 US6104645(A) 申请公布日期 2000.08.15
申请号 US19960659724 申请日期 1996.06.06
申请人 MICRON TECHNOLOGY, INC. 发明人 ONG, ADRIAN;ZAGAR, PAUL S.
分类号 G11C29/00;(IPC1-7):G11C7/00 主分类号 G11C29/00
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