| 摘要 |
PROBLEM TO BE SOLVED: To realize a higher growth rate and improve crystallinity by loading a sapphire substrate within a reactor, supplying a mixed gas to NH3 gas and HCl into the reactor to process the sapphire substrate and realizing growth of GaN film on the processed sapphire substrate. SOLUTION: A sapphire substrate is loaded (S10) within a reactor and such a sapphire substrate is processed with the NH3 gas into the primary nitride (S20). The surface of this sapphire substrate is processed with a mixed gas of NH3 and HCl (S31), thereafter process is performed (S32) for attaining the secondary nitride (S32). The GaN film is caused to grow on the sapphire substrate of the secondary nitride (S40). Namely, the sapphire substrate is loaded to the reactor before the growth to execute the surface process with the mixed gas of NH3 and HCl (S31) and thereafter the additional process to obtain nitride is executed (S30) to realize growth of a crystal face and during this process, the temperature of the source, the growth temperature and the rate of group III elements and group V elements are adjusted. |
