| 摘要 |
PROBLEM TO BE SOLVED: To realize smooth transfer of particles in order to improve throughput by providing face to face a cathode and an anode in both sides of the route formed to transfer the particles and then executing the unisotropic etching in the course of transfer of the particles through this route. SOLUTION: When the predetermined gas is introduced from a gas introducing port 15 after exhaustion, an ion sheath area is formed at the position deviated to an electrode 1 between a first electrode 1 (cathode) and a second electrode 2 (anode). A route 5 is facing to the ion sheath area through an opening 7 and the unisotropic etching is performed at the position opposing to the opening 7 due to the transfer of the particle semiconductor 4. Since the opening 7 of the electrode 1 is formed in the direction of the electrode 1 axis substantially at the total circumference position, namely in the axial direction of the route 5, the unisotropic etching effect is attained substantially for total circumferential in the source of dropping transfer of the particle semiconductor 4.
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