发明名称 CVD DEVICE, FILM FORMING METHOD AND PRODUCTION OF MAGNETIC RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a thermal filament-plasma CVD device improved so as to prevent the secular variation of a film forming rate at the time of continuously forming a film consisting essentially of carbon. SOLUTION: As to this thermal filament-plasma CVD device, the state of a gaseous starting material for film formation is made into the one of plasma by discharge between filamentlike cathode and anode heated under a vacuum condition in a film forming chamber, and then, the plasma is acceleratedly bombarded against the surface of a substrate by a minus potential to form a film. In this case, the cathode is composed of metallic carbide.
申请公布号 JP2000226669(A) 申请公布日期 2000.08.15
申请号 JP19990025036 申请日期 1999.02.02
申请人 MITSUBISHI CHEMICALS CORP;UTEC:KK 发明人 SASAOKA YASUSHI;ABE HISASHI
分类号 G11B5/84;C23C16/26;C23C16/50;C23C16/513;(IPC1-7):C23C16/513 主分类号 G11B5/84
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