发明名称 Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer
摘要 A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.
申请公布号 US6104081(A) 申请公布日期 2000.08.15
申请号 US19980080784 申请日期 1998.05.18
申请人 U.S. PHILIPS CORPORATION 发明人 DEKKER, RONALD;MAAS, HENRICUS G. R.;HAHN, STEFFEN WILHELM
分类号 H01L21/02;H01L21/20;H01L21/336;H01L21/58;H01L21/60;H01L21/68;H01L23/498;H01L27/12;H01L29/786;(IPC1-7):H01L29/06;H01L23/58 主分类号 H01L21/02
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