Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device

摘要

This invention provides a silicon-system thin film, characterized by containing at least 1 ppm of phosphorus atoms and diffraction intensity at the (220) plane with X ray or electron beams of at least 30% of total diffraction intensity, photovoltaic device that contains the silicon-system thin film, and methods for forming the silicon-system thin film and photovoltaic device. These methods give the silicon-system thin film and photovoltaic device of high photoelectric conversion efficiency at a high film-making rate.