发明名称 MANUFACTURE OF RESIN SEALED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form a land electrode on the bottom face of a resin sealed semiconductor device from a state of a frame without using a substrate, etc., and to form a standoff of the land electrode self-alignedly. SOLUTION: A terminal land frame has land structures 43 connected to the main body 41 of a frame by means of thin parts and is so structured that the land structures 43 may be separated from the main body 41 of a frame by breaking the thin parts with pressing force. Different types of semiconductor elements 45a, 45b are mounted on the land structures 43 of the terminal land frame and are electrically conneted to some land structures 43 which will be external land electrodes by metal fine wires 46. After the semiconductor elements 45a and 45b are separated and sealed, pressing force is applied to the bottom faces of the land structures 43 to separate the land structures 43 from the main body 41 of a frame and obtain a plurality of types of plastic molded semiconductor devices 48a, 48b.
申请公布号 JP2000228478(A) 申请公布日期 2000.08.15
申请号 JP19990027541 申请日期 1999.02.04
申请人 MATSUSHITA ELECTRONICS INDUSTRY CORP 发明人 NANO MASANORI;ADACHI OSAMU;NOMURA TORU
分类号 H01L23/12;H01L23/50;(IPC1-7):H01L23/50 主分类号 H01L23/12
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