| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film manufacturing method with which a semiconductor thin film, having superior planarity and a large grain diameter, can be manufactured without increasing the number of processes. SOLUTION: A non-single crystal thin-film semiconductor 2 and a cap film 5, containing a catalytic element, are formed on an insulated substrate 1, and after an excimer laser beam 8 is made to irradiate from above the cap film 5, the cap film 5 is removed. The cap film 5 is formed by a sputtering method or a hot wire CVD method. The thickness of the cap film is at least 100Å. |
