SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To form a contact with high reliability in a source/drain region and to form, with high reliability, a silicide layer at a part of the silicon layer which is crystal-grown by contacting to a silicon-contained metal molten liquid. SOLUTION: A silicon layer 22(22s and 22d) wherein a single crystal silicon is crystal-grown by touching a silicon-contained metal molten liquid is provided on a p-well region 13 where one component (source region, drain region of silicon of a semiconductor element (MOS transistor 1) formed on a silicon substrate 11 is formed, with a source region 17 and a drain region 18 formed thick.