Methods and arrangements for improved spacer formation within a semiconductor device
摘要
Methods and arrangements are provided to increase the process control during the formation of spacers within a semiconductor device. The methods and arrangements include the use of non-functional or dummy lines, regions and/or patterns to create a topology that causes the subsequently formed spacers to be more predictable and uniform in shape and size.
申请公布号
US6103611(A)
申请公布日期
2000.08.15
申请号
US19970993830
申请日期
1997.12.18
申请人
ADVANCED MICRO DEVICES, INC.
发明人
EN, WILLIAM G.;NGO, MINH VAN;YANG, CHIH-YUH;FOOTE, DAVID K.;BELL, SCOTT A.;KARLSSON, OLOV B.;LYONS, CHRISTOPHER F.