发明名称 Liquid crystal display having a transistor with doped region in an active semiconductor layer
摘要 A semiconductor element suitable for use in the display region of a liquid crystal display or for use in the drive circuit region for driving the display region is comprised of first, second, third and fourth electrodes; a pair of first conducting type semiconductor layers separated from each other and connected to the second and the third electrodes, respectively; an intrinsic semiconductor layer connected to the pair of the first conductivity type semiconductor layers; and a second conductivity type semiconductor layer formed on the intrinsic semiconductor layer, wherein an insulating film is interposed between the first electrode and the intrinsic semiconductor layer, and the fourth electrode is formed on the second conductivity type semiconductor layer formed on the intrinsic semiconductor layer.
申请公布号 US6104040(A) 申请公布日期 2000.08.15
申请号 US19970885182 申请日期 1997.06.30
申请人 HITACHI, LTD. 发明人 KAWACHI, GENSHIRO;MIKAMI, YOSHIRO
分类号 G02F1/1362;H01L29/786;(IPC1-7):H01L29/78 主分类号 G02F1/1362
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