COLOR IMAGE SENSOR AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To improve optical sensitivity to various components of light by providing a second depletion region on the surface of a P-type semiconductor layer more closely to the surface than a first depletion region, and providing a third depletion layer on the surface of the P-type, semiconductor layer more closely to the surface than the second layer. SOLUTION: A photo diode of a red pixel unit 710 has a first depletion region 702 provided near the surface of a P-epitaxial layer 701. A photo diode of a green pixel unit 720 has a second depletion region 703 provided on the surface of the layer 701 more closely to the surface than the photo diode of the red pixel unit 710. A photo diode of a blue pixel unit 730 has a third depletion region 704 provided on the surface of the layer 701 more closely to the surface than the photo diode of the green pixel unit 720. As a result, a large degree of freedom and resolution can be attained when image processing.