发明名称 |
Method and system for providing a drain side pocket implant |
摘要 |
A system and method for providing a memory cell on a semiconductor is disclosed. The memory cell has a source and a drain. The method and system include providing a source implant in the semiconductor, providing a pocket implant in the semiconductor, and providing a drain implant in the semiconductor after the pocket implant is provided. Thus, short channel effects are reduced.
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申请公布号 |
US6103602(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19970992618 |
申请日期 |
1997.12.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
THURGATE, TIMOTHY J.;CHAN, VEI-HAN |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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