Semiconductor memory device having redundancy circuit with high rescue efficiency

摘要

There is disclosed a memory cell array including regular and redundant memory cells, a plurality of bit lines connected to the regular memory cells, a plurality of redundant bit lines connected to the redundant memory cells, a regular data line commonly coupled to the plurality of regular bit lines, and a redundant data line commonly coupled to the plurality of redundant bit lines. Column selection lines include regular column selection lines for selecting regular bit lines, and redundant column selection lines for selecting redundant bit lines. Furthermore, the number of redundant column selection lines is smaller than that of the regular column selection lines.