COATING LIQUID FOR FORMATION OF SILICA-BASED FILM, MANUFACTURE OF THE SAME AND SILICA-BASED FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To adjust a coating liquid to form a silica-based film that is effective for formation of silica-based film, prevents corrosion of metal wiring and has a low dielectric coefficient by hydrolysis polymerization and condensation of each particular amount of organic amine compound expressed by the particular general expression and alkoxy silane compound expressed by the particular general expression. SOLUTION: A coating liquid to form a silica-based film is adjusted through hydrolysis polymerization and condensation by mixing the alkoxylane compound expressed with the expression I (in the expression, R1 indicates alkyl group and aryl radical where number of carbons is 1 to 6; R2 indicates alkyl group where the number of carbons is 1 to 4; n indicates an integer of 0 to 2) and an organic amine compound expressed with the expression II (in the expression, R3 indicates alkyl group where number of carbons is 1 to 6a; n indicates an integer of 1 to 3). After the substrate surface is coated with the coating liquid to form the silica-based film, it is heated and hardened to manufacture the silica-based film or a semiconductor device on which the silica-based film is formed.