| 摘要 |
PROBLEM TO BE SOLVED: To provide an reverted staggered polycrystal silicon thin-film transistor together with its manufacturing method wherein the photolithography and thermal process are simplified. SOLUTION: A gate electrode 3 is formed on a glass substrate 1, a polycrystal silicon film 5 is formed through a gate insulating film 4, a phosphorus(P) ion is implanted into the polycrystal silicon film 5 with an insulator layer 6 as a mask to film-form inter-layer insulating films 9 and 11, and then a part of the inter-layer insulating films 9 and 11 on the polycrystal silicon film 5 is opened, through which opening part the phosphorus(P) ion is implanted again to form a source region (N+-Si) 8a and drain region (N+-Si) 8b.
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