发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent the thinning of a pattern even if the pattern has a narrow interval by carrying out exposure and development by using a 2nd mask having such a pattern as to leave a photoresist part which covers only the required part of a hard mask pattern after exposure and development. SOLUTION: The top of a silicon substrate is subjected to 1st exposure and development through a mask A (6) to form a resist pattern 5. A silicon dioxide film 4 is etched by using the resist pattern 5 as a mask to form a hard mask 8 on a polycrystalline silicon film 3. A positive type photoresist film is formed on the silicon film 3 and subjected to 2nd exposure and development through an aligned mask B to cover only the part of the hard mask corresponding to a gate pattern 10 to be formed with the resist 9 for protection. The remaining part of the hard mask not covered with the resist 9 is removed by etching and then the resist 9 is removed. |
申请公布号 |
JP2000227652(A) |
申请公布日期 |
2000.08.15 |
申请号 |
JP19990029092 |
申请日期 |
1999.02.05 |
申请人 |
NEC CORP |
发明人 |
IMAI KIYOTAKA |
分类号 |
G03F1/30;G03F1/34;G03F1/68;G03F7/00;H01L21/027;H01L21/033;H01L21/311;H01L21/3213;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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