INTEGRATED CIRCUIT CAPACITOR

摘要

PROBLEM TO BE SOLVED: To obtain an integrated circuit capacitor imparted with quality and characteristics resisting against ion implantation damage. SOLUTION: After forming a dielectric layer 16 and a conductive layer 18 on a semiconductor structure 14, a capacitor is formed by ion implantation. Consequently, ion implantation damage is reduced in the region beneath the conductive layer 18. Implanted impurities are expelled under the conductive layer 18 and two opposite impurity distributions are overlapped thus forming a junction 12 beneath the conductive layer 18.