| 摘要 |
PROBLEM TO BE SOLVED: To decrease reproduction noises and to obtain good/SN and bit error rate by using a tunnel junction element consisting of a free layer/nonmagnetic layer/fixing layer and providing part of the free layer with longitudinal bias layers. SOLUTION: A lower shielding layer 1 and the free layer 6 are successively laminated on a substrate and the patterned longitudinal bias layers 7 and insulating layers 8 are laminated thereon and further, an upper electrode layer 9 and an upper shielding layer 10 are laminated thereon. The portion between the fixing layer 3 and the free layer 6 constitutes a magneto-resistive film. When current is passed from the upper electrode layer 9 to the lower electrode layer 2, the current passes between the insulating layers 8 arranged on the right and left from the upper electrode layer 9, passes between the free layer 6 and the fixing layer 3 and flows to the lower electrode layer 2. Since the longitudinal bias layers 7 are insulated from the flow of the current, the layers do not participate in the flow of the current. Since the longitudinal bias layers 7 are directly laminated on the free layer 6, the free layer 6 is sufficiently longitudinally biased.
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