发明名称 |
Method and system for providing a contact on a semiconductor device |
摘要 |
A method for providing at least one contact on a semiconductor is disclosed. The semiconductor includes a plurality of isolation structures. The method and system include providing an etch-stop layer in direct contact with the semiconductor, providing a dielectric layer over the etch-stop layer, and etching through the dielectric layer and a portion of the etch-stop layer. A portion of the semiconductor in proximity with one of the plurality of isolation structures is not exposed during the etch.
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申请公布号 |
US6103593(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19980023836 |
申请日期 |
1998.02.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUI, ANGELA T.;CHEN, HUNG-SHENG;KIM, UNSOON |
分类号 |
H01L21/762;H01L21/768;(IPC1-7):H01L21/76;H01L21/44 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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