| 发明名称 |
Closely pitched polysilicon fuses and method of forming the same |
| 摘要 |
A method for decreasing the pitch of polysilicon fuses uses tungsten barriers formed adjacent to the fuse elements. The tungsten barriers are made compatible with the process to form a crack stop by stacking tugsten at the via level on top of the tungsten at the contact level in the crack stop. An interlevel dielectric is used as a cover for the fuse.
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| 申请公布号 |
US6104079(A) |
申请公布日期 |
2000.08.15 |
| 申请号 |
US19990276160 |
申请日期 |
1999.03.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
STAMPER, ANTHONY K. |
| 分类号 |
H01L21/82;H01L21/768;H01L23/525;H01L29/00;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/82 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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