发明名称 |
Method to form a recess free deep contact |
摘要 |
A method of forming a deep contact by forming a dielectric layer 20 over a semiconductor structure 10. A main point is that the hard mask 30 is removed after the plug 52 is formed. A hard mask layer 30 is formed over the dielectric layer 20. A contact photoresist layer 36 is formed over the hard mask layer 30. The hard mask layer 30 is etched through the contact photoresist opening 39 to form a contact hard mask opening 41 exposing the dielectric layer 20. The dielectric layer 20 is etched using a high density plasma etch process using the contact photoresist layer 36 and the hard mask layer 30 as an etch mask forming a contact hole 40 in the dielectric layer 20. The contact photoresist layer 36 is removed. A metal layer 50 is formed filling the contact hole 40 and covering over the hard mask layer 30. The metal layer 50 is etched back forming a plug 52 filling the contact hole 40. Now, the hard mask layer 30 is removed. The removal of the hard mask 30 after the metal layer 50 deposition: (a) prevents the contact hole 40 from being contaminated from photoresist and other contamination formed during the hard mask 30 removal steps; and (b) creates a plug 52 that does not have a recess.
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申请公布号 |
US6103455(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19980073947 |
申请日期 |
1998.05.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HUANG, KUO CHING;CHIANG, WEN-CHUAN;WU, CHENG-MING;LEE, YU-HUA |
分类号 |
H01L21/768;(IPC1-7):G03F7/26 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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