| 摘要 |
A semiconductor device with a memory cell having a transfer transistor and a storage capacitor is provided, which is capable of further miniaturization of the storage capacitor. The transistor is formed in an active region of a semiconductor substrate. An insulating layer is formed on the substrate to cover the active region. The insulating layer has a penetrating opening extending to a source/drain region of the transistor. A first cylindrtical electrode is formed in the opening of the insulating layer to be electrically connected to the first source/drain region. A second cylindrtical electrode is formed in the opening of the insulating layer in the inside of the first electrode to be concentric with the first electrode. A dielectric layer is formed on the insulating layer to cover the surface of the first and second electrodes. A third electrode is formed on the dielectric to be opposite to the first and second elecgrodes through the dielectric layer. The first and second electrodes constitute a storage electrode of the storage capacitor, and the third electrode constitutes a plate electrode thereof.
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