发明名称 MANUFACTURE OPTOELECTRIC TRANSDUCER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing stably a optoelectric transducer element by forming a pn joint through thermal diffusion by using a compound semiconductor crystal substrate made of 12 (2B) group element and 16 (6B) group element of the periodic table. SOLUTION: A compound semiconductor crystal substrate (p-type ZnTe single crystal board 1) made of 12 (2B) group element and 16 (6B) element of the periodic table is used, and a diffusion source 2 showing a conductivity (n type) different from the substrate is arranged on the surface of the substrate, and then the diffusion source is heated to form a pn joint 5 through the thermal diffusion. In such a method, thanks to the diffusion source 2 arranged on the surface of the substrate, formation of defects compensating a level showing a conductivity different from a substrate which is formed by the diffusion source on the surface during diffusion process, can be prevented, and the diffusion source 2 is made of Al and Si for gettering impurities on the substrate surface.
申请公布号 JP2000228540(A) 申请公布日期 2000.08.15
申请号 JP19990029138 申请日期 1999.02.05
申请人 JAPAN ENERGY CORP 发明人 HANABUSA MIKIO;SATO KENJI
分类号 H01L21/225;H01L21/322;H01L21/385;H01L33/06;H01L33/28;H01L33/30;H01L33/40 主分类号 H01L21/225
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