| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for wet-cleaning a semiconductor substrate, which can eliminate an organic substance and a metal impurity on the surface of the semiconductor substrate and can prevent these organic substance and metal impurity from re-adhering to the surface of the semiconductor substrate. SOLUTION: The surface of a semiconductor substrate is cleaned with a chemical liquid (HCl/O3/H2O/BHF or DHF) in which DHF(diluted hydrofluoric acid) or BHF(buffered hydrofluoric acid) is added to HCl/O3 water. It is preferable that a substance be used such that O3 is annexed to a hydrochloric acid of 5% or less as the HCl/O3 water. Furthermore, it is desirable that the chemical liquid (HCl/O3/H2O/BHF or DHF) be a substance that DHF or BHF of 1% or less is added to the HCl/O3 water. It is suitable to use this cleaning method, particularly for cleaning the surface of the semiconductor substrate prior to the growth of a gate oxide film.
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