| 摘要 |
PROBLEM TO BE SOLVED: To provide the positive photoresist composition for far ultraviolet exposure prevented from occurrence of development defects and scum at the time of development by incorporating alkali-soluble groups protected with partial structures containing specified alicyclic hydrocarbons and resins to be decomposed by acid action and raised in solubility in alkali. SOLUTION: This composition contains a compound to be allowed to generate an acid by irradiation with activated rays or radiation, and the resin having the alkali-soluble groups protected with at least one of partial structures containing the alicyclic hydrocarbons represented by formulae I-III and the like, and the resin to be decomposed by acid action and to be raised in solubility in alkali and a compound to be decomposed by acid action and to generate solfonic acid. In formulae I-III, R11 is a methyl or ethyl group or the like; Z is an atomic group necessary to form the alicyclic hydrocarbon group together with the carbon atoms; each of R12-R16 is a 1-4C straight or branched alkyl or alicyclic group, and at least one of R12-R14 or one of R15 and R16 is an alicyclic group. |
