| 摘要 |
An electrically programmable non-volatile memory integrated circuit includes: read/write resources; a first bit line; a second bit line; an option configuration register consisting of at least one bit; a reading mechanism; and a writing mechanism. The option configuration register includes, for the at least one bit: a bistable element including at least one memory cell, and a static memory element. The at least one memory cell is coupled to the first bit line and to the second bit line, and the static memory element is coupled to the bistable element. The reading mechanism is for reading a state of the static memory element, and it utilizes the first and second bit lines and the read/write resources. The writing mechanism is for setting the state of the static memory element, and it utilizes the first and second bit lines and the read/write resources.
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