| 摘要 |
PURPOSE:To provide a method for growing InGaN which can grow InXGa1-XN with X value within 0<X<1 and has improved crystallizability indicating a strong light emission between bands of InGaN. CONSTITUTION:This method grows indium gallium nitride expressed by a general expression InXGa1-XN (X; 0<X<1) by the organic metal vapor growth method, and electromagnetic waves with larger energy than the band gap energy of indium gallium nitride is applied to a growth surface during growth of indium gallium nitride. |
