发明名称 PROXIMITY FIELD LIGHT PROBE AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide an optical near field probe which is small in size and which significantly improves the detection efficiency for scattered light or the like produced by optical near field. SOLUTION: This optical near field probe has a structure of at least a semiconductor photodetector (photodiode PD) consisting of a first electrical conductivity type high concn. impurity layer 10, a first electrical conductivity type low concn. impurity layer 20 and a second electrical conductivity type impurity injected region 30, and a through hole 40 having a small aperture 50 formed in the photodiode. Therefore, the optical near field probe can be made small in size by integration of the minute aperture and the semiconductor photodetector (photodiode PD) which are conventionally proposed for the generation of the proximity field light, and the detection efficiency for scattered light produced by the optical near field can be increased.
申请公布号 JP2000222765(A) 申请公布日期 2000.08.11
申请号 JP19990151923 申请日期 1999.05.31
申请人 RICOH CO LTD;KANAGAWA ACAD OF SCI & TECHNOL 发明人 FUJITA SHUNSUKE;OTSU GENICHI;KOROGI MOTONOBU
分类号 G11B7/135;G01B11/30;G01N37/00;G01Q60/22;G01Q80/00;G11B7/22;H01L31/02;H01L31/10 主分类号 G11B7/135
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