HORIZONTAL INSULATION GATE BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To reduce the resistance of a gate electrode and increase a latchup preventive capability by formaing a metal interconnection layer on an emitter electrode through an insulation layer to make a contact between the metal interconnection layer and a gate electrode. SOLUTION: Connections 9b between gate electrodes 9 and 9a and contacts between the connections 9b and a gate interconnection 13 are each formed at three places along the longitudinal direction to allow gate current to flow into an aluminum-silicon interconnection through the nearest contact at the time of turn-off to reduce the resistance of the gate electrode 9 in the longitudinal direction. When connecting a plurality of unit insulation gate bipolar transistors IGBTs in parallel with each other, gate electrodes of each two adjacent unit transistors IGBTs can be easily connected through the gate interconnection 13, thereby uniforming the gate resistance of the entire IGBTs. As a result, an operating time of each unit transistor IGBT at the time of turn-off and that of the entire IGBTs can be uniformed to prevent the concentration of power and increase a latchup preventive capability.