| 摘要 |
PROBLEM TO BE SOLVED: To enhance the etching resistance of a resist by irradiation with electron beams, to lower heating temperature and to shorten treatment time. SOLUTION: A resist 33 is formed on an oxide film 31 formed on a substrate 30 by way of an antireflection film 32, the resist 33 is exposed and developed to form a resist pattern, and heat treatment is carried out in a gaseous atmosphere so as to enhance the etching resistance of the resist 33. In this heat treatment, the substrate 30 is heated to 100 deg.C in a reducing gaseous atmosphere containing hydrogen and the resist 33 is irradiated with 1,200μC/cm2 electron beams at 10 keV accelerating voltage to promote the carbonization of the resist 33. |
