| 摘要 |
PROBLEM TO BE SOLVED: To raise the controllability of film growth rate by specifying the pressure value in the position of a substrate in which to grow a film while keeping the substrate in a specified temperature range, and supplying the gas including monosilane gas or disilane gas. SOLUTION: Film growth is performed by supplying a silicon crystalline substrate 9, which is heated to a specified temperature by a heating mechanism annexed to a substrate holder 2, with silane gas or disilane gas by a silane gas supply source 3. At supply of silane gas, its quantity, its start, and its termination are decided by a quantity-of-silane-gas controller 4. The pressure in the position of the silicon substrate 9 is settled by the quantity of supply of gas and the exhaust capacity of an exhaust pump. Such condition that the quantity of supply (the pressure in the position of the silicon crystalline substrate 9) is 10-2 Pa or over, and that the substrate temperature is 200 deg.C or over and 550 deg.C or under is applied to it. Under this condition, the film growth rate scarcely changes even if the quantity of supply of gas or the pressure or the temperature of the substrate changes.
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