| 摘要 |
PROBLEM TO BE SOLVED: To obtain the reliability the same as or higher than that of a MOS transistor by forming a second impurity region and a plurality channel formation regions so that these regions may overlap a gate electrode through a gate insulating film. SOLUTION: Considering the driving voltages of an n-channel TFT 204 of a pixel matrix circuit and n-channel TFTs 201, 202, 203 of a CMOS circuit, a second impurity region and a third impurity region, both of which will become LDD regions, can be easily differentiated in length in the channel length direction on one and the same substrate to be formed into the most appropriate shape for each TFT which constitutes each circuit, In a TFT of a single-gate multichannel structure wherein a plurality of channel formation regions divided by low density impurity regions which will become LDD regions are formed for one gate electrode, the number of channel formation regions and the number of second impurity regions corresponding to one gate electrode can be determined based on characteristics of a TFT to be fabricated.
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