发明名称 SEMICONDUCTOR PRODUCTION SYSTEM AND PRODUCTION METHOD EMPLOYING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor production system and a production method employing it in which yield can be increased by reducing etching reaction products deposited on the semiconductor production system. SOLUTION: A semiconductor production system comprises a lower electrode 10 disposed in a processing container 12, an upper electrode 13 disposed oppositely to the lower electrode 10 in a processing container 12, and power supply sections 14, 15 for applying high frequency power, respectively, to the electrodes 13, 10. The semiconductor production system further comprises a coiled inductively coupled antenna 17 formed on the outer circumference of the processing container 12 between the upper and lower electrodes 13, 10, and an auxiliary power supply section 18 for applying high frequency power to the inductively coupled antenna 17 and generating plasma in the processing container 12.
申请公布号 JP2000223472(A) 申请公布日期 2000.08.11
申请号 JP19990027166 申请日期 1999.02.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 OGINO MASARU
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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