| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state device in which decrease in the on/off ratio, decrease in the tunnel current during resonance and lowering of coherence of electronic wave can be lessened. SOLUTION: A single electron tunnel element is fabricated of a semiconductor substrate 2, a laminate structure 1 of semiconductor layers 3, 4, a two-dimensional electron gas layer 5, a device structure region 10 formed by etching process, a depletion region 9, a source side two-dimensional electron gas region 6, a drain side two-dimensional electron gas region 7, and a dot-like two-dimensional electron gas region 8. Furthermore, an etching structure 11 is provided to surround the depletion region 9 of a single electron tunnel element thus constituting a resonance structure 12. |
